Polish scientists are preparing another material for the future. Gallium nitride can replace silicon semiconductors – All news

Gallium nitride (GaN) is a synthetic material that is a better semiconductor than the widely used silicon. It has already revolutionized lighting – it can be found in most LED lamps today – and has allowed miniatures, among others. smartphone chargers or laptop power adapters. According to scientists, the scope of its application will be wider. – In the future, among others, potassium nitride will be widely used in electric cars and charging stations or base stations of the latest generation mobile networks – Kamila Chvik of the Institute of Microelectronics and Photonics, part of the Lukasiewicz Research Network, says.

At our institute, we work with gallium nitride because it has better electrical parameters than silicon. Gallium nitride devices can be smaller, run hotter and therefore consume less electricity – says the agency Newseria Business mgr inż. Yaroslav Tarenko from the Institute of Microelectronics and Photonics.

Gallium nitride, or GaN, is a chemical compound of nitrogen and gallium that does not occur naturally in nature. Produced artificially in laboratories. It is also a semiconductor material with interesting physical properties, ie it can replace silicone in many applications – the most widely used semiconductor.

Gallium nitride is not the future, it is the present. We often do not realize that most of the devices in our homes are based on GaN – says Kamila Chvik, a junior specialist at the Institute of Microelectronics and Photonics. – This chemical compound revolutionized lighting, so Japanese scientists were awarded the 2014 Nobel Prize in Physics. Today, most LED lamps are made of light emitting diodes of gallium nitride. However, the application of this element is not limited to them. Gallium nitride transistors are already used in high-speed chargers for mobile phones. Maybe someone noticed that the latest laptop power supply is smaller. This is due to potassium nitride.

The Warsaw Institute is currently developing many types of electronic devices based on gallium nitride. These are diodes and transistors, for example, for power supply, chargers or power banks, as well as transistors for military applications, such as various types of radars.

We are also working on detectors and sources of ultraviolet radiation – dr inż emphasizes. Andrzej Taube, a leader in GaN-based instruments at Łukasiewicz – Institute of Microelectronics and Photonics. – What exactly is our job? Well, we design the devices to meet specific requirements, such as determining the shape and size of the electrodes. Then we develop such a tool in a high-purity laboratory, and the technological process itself can cover more than 100 different operations. We can carry out the whole process in Łukasiewicz laboratories IMiF. It is then tested to verify that the manufactured device is working properly and can then be delivered to the final buyer. At this stage, we often cooperate with Polish and foreign companies.

Łukasiewicz – IMiF implements many projects related to potassium nitride. One of them is the EnerGaN project, co-financed by the National Research and Development Center, which involves the creation of new types of devices based on this chemical compound. These are, for example, vertical transistors designed for use in smart power banks.

– Thanks to the use of our devices, smart power banks can be smaller, more efficient and, above all, more reliable than other solutions – Andrzej Taube says.

In the future, gallium nitride will be widely used in a wide range of devices, including electric vehicles and charging stations, base stations of the latest generation mobile networks or miniature projectors – Listed by Kamila Ćwik.

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